Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors

被引：0
|
作者：
Chen, Ching-Hui
Keller, Stacia
Haberer, Elaine D.
Zhang, Lidong
DenBaars, Steven P.
Hu, Evelyn L.
Mishra, Umesh K.
Wu, Yifeng
机构：
来源：
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | / 17卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2755 / 2758
相关论文
共 50 条
  • [1] Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors
    Chen, CH
    Keller, S
    Haberer, ED
    Zhang, LD
    DenBaars, SP
    Hu, EL
    Mishra, UK
    Wu, YF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2755 - 2758
  • [2] Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs
    Buttari, D
    Chini, A
    Meneghesso, G
    Zanoni, E
    Chavarkar, P
    Coffie, R
    Zhang, NQ
    Heikman, S
    Shen, L
    Xing, H
    Zheng, C
    Mishra, UK
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (03) : 118 - 120
  • [3] Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer
    A. Yu. Pavlov
    K. N. Tomosh
    V. Yu. Pavlov
    D. N. Slapovskiy
    A. V. Klekovkin
    I. A. Ivchenko
    Nanobiotechnology Reports, 2022, 17 : S45 - S49
  • [4] Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer
    Pavlov, A. Yu.
    Tomosh, K. N.
    Pavlov, V. Yu.
    Slapovskiy, D. N.
    Klekovkin, A. V.
    Ivchenko, I. A.
    NANOBIOTECHNOLOGY REPORTS, 2022, 17 (SUPPL 1) : S45 - S49
  • [5] Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3
    Gryglewicz, J.
    Oleszkiewicz, W.
    Ramiaczek-Krasowska, M.
    Szyszka, A.
    Prazmowska, J.
    Paszkiewicz, B.
    Paszkiewicz, R.
    Tlaczala, M.
    MATERIALS SCIENCE-POLAND, 2011, 29 (04): : 260 - 265
  • [6] CH4/H2 REACTIVE ION ETCHING FOR GATE RECESSING OF PSEUDOMORPHIC MODULATION DOPED FIELD-EFFECT TRANSISTORS
    PEREIRA, R
    VANHOVE, M
    DERAEDT, W
    JANSEN, P
    BORGHS, G
    JONCKHEERE, R
    VANROSSUM, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 1978 - 1980
  • [7] Effect of Ge in Cl2 plasma for reactive ion etching of GaN
    Urushido, T
    Yoshida, H
    Miyake, H
    Hiramatsu, K
    GAN AND RELATED ALLOYS-2001, 2002, 693 : 693 - 698
  • [8] Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs
    Buttari, D
    Chini, A
    Meneghesso, G
    Zanoni, E
    Moran, B
    Heikman, S
    Zhang, NQ
    Shen, L
    Coffie, R
    DenBaars, SP
    Mishra, UK
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (02) : 76 - 78
  • [9] Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
    Miller, EJ
    Dang, XZ
    Yu, ET
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) : 5951 - 5958
  • [10] Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
    Mikulics, M.
    Fox, A.
    Marso, M.
    Gruetzmacher, D.
    Donoval, D.
    Kordos, P.
    VACUUM, 2012, 86 (06) : 754 - 756
12345