GaN based p-n structures grown on SiC substrates

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作者：

Cree Research, Inc., United States ^{[1
]}

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来源：

MRS Internet Journal of Nitride Semiconductor Research | 1996年 / 1卷

关键词：

Current density - Current voltage characteristics - Electric breakdown - Electron beams - Epitaxial growth - Gallium nitride - Growth kinetics - Heterojunctions - Leakage currents - Mathematical models - Metallorganic chemical vapor deposition - Reactive ion etching - Silicon carbide;

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摘要：

Wide band gap nitrides(InN, GaN, AIN) have been considered promising optoelectronics materials for many years. Recently two main technological problems in the nitrides were overcome: (1)high quality layers has been grown on both sapphire and SiC substrates and(2) p-type GaN and AIGaN material has been obtained. These achievements resulted in the fabrication of bright light emitters in the violet, blue and green spectral regions.First injection laser has been demonstrated. This paper reviews results obtained over the last few years on nitride p-n junctions, particularly on GaN based p-n junctions grown on SiC substrates. We will consider GaN p-n junctions, AIGaN p-n junctions, GaN and AIGaN p-i-n structures, and, finally, GaN/SiC p-n structures.

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