Effects of temperature on electronic structures of barrier-δ-doped quantum wells Si/Ge0.3Si0.7

被引：0
作者：
Xu, Zhizhong [1 ]
机构：
[1] Fudan Univ, Shanghai, China
来源：
Acta Metallurgica Sinica (English Edition), Series A: Physical Metallurgy & Materials Science | 1996年 / 9卷 / 05期
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7
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页码：561 / 567
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