Study on the properties and application of the Si3N4 thin film prepared by ECR-PECVD

被引：0

作者：

Ren, Zhaoxing ^{[1
]}

Chen, Junfang ^{[1
]}

Ding, Zenfeng ^{[1
]}

Shi, Yicai ^{[1
]}

Song, Yingen ^{[1
]}

Wang, Daoxiu ^{[1
]}

机构：

[1] Inst of Plasma Physics, Academia Sinica, Hefei, China

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 1996年 / 24卷 / 02期

关键词：

Chemical vapor deposition - Optical properties - Thin films;

D O I：

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中图分类号：

学科分类号：

摘要：

The Si3N4 thin films have been prepared by the ECR-PECVD technology under different deposition temperatures. The refractive index and thickness of the Si3N4 thin film have been calculated with the transmittance curve of the Si3N4 thin film, and the results agree with experimental measurement. The results show that the density and refractive index increase with the increasing deposition temperature, the radial thickness nonuniformity of the Si3N4 thin film is about ±5% in the range of φ60mm. The microhardness has been measured. The photoluminescence effect of the Si3N4 thin film has been measured by the fluorescence spectrophotometer. The application of the passivation film of the superfrequency large power semiconducting transistor has been preliminarily investigated.

引用

页码：56 / 59