GaSb-growth study by realtime crystal-growth analysis system using synchrotron radiation photoelectron spectroscopy

A system has been developed for realtime crystal-growth analysis by photoelectron spectroscopy, using vacuum ultraviolet (VUV) light from synchrotron radiation. This system consists of a VUV synchrotron radiation beamline and growth/analysis apparatus in which photoelectron spectroscopy is performed. A ″non-scanning″ photoelectron spectroscopy measurement method that uses only electron energy dispersion on a multi-channel detector achieves sub-second resolution. This system was used to monitor the GaSb-growth process by alternately supplying Ga and Sb molecular beams; the changes in the chemical state were analyzed with sub-second resolution. The Ga supply resulted in a Ga-full surface; Ga droplets formed on this surface, in which the Sb atoms remained lying on the Ga layer. The Sb supply did not change the ratio of Ga and Sb atoms at the surface from the initial value. These results show, that exposure to an Sb flux causes a crystal surface to once again become an Sb-rich surface although Ga droplets were previously formed during exposure to a Ga flux a GaSb surface was thus successfully grown.