HOT-ELECTRON TRAPPING IN THIN LPCVD SIO2 DIELECTRICS.

被引：0

作者：

Kawamoto, Galen H. ^{[1
]}

Magyar, Gregory R. ^{[1
]}

Yau, Leopoldo D. ^{[1
]}

机构：

[1] Intel Corp, Hillsboro, OR, USA, Intel Corp, Hillsboro, OR, USA

来源：

IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 12期

关键词：

HOT-ELECTRON PERFORMANCE - HOT-ELECTRON TRAPPING - LIQUID-PHASE CHEMICAL VAPOR DEPOSITION OXIDE - POSTDEPOSITION ANNEAL - TRAP SENSITIVITY;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] HOT-ELECTRON TRAPPING IN THIN LPCVD SIO2 DIELECTRICS
KAWAMOTO, GH
MAGYAR, GR
YAU, LD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2450 - 2455
[2] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2
GDULA, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : C253 - C253
[3] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2
GDULA, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 42 - 47
[4] HOT-ELECTRON IMMUNITY OF SIO2 DIELECTRICS WITH FLUORINE INCORPORATION
WRIGHT, PJ
KASAI, N
INOUE, S
SARASWAT, KC
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (08) : 347 - 348
[5] A MONTE-CARLO MODEL OF HOT-ELECTRON TRAPPING AND DETRAPPING IN SIO2
KAMOCSAI, RL
POROD, W
JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2264 - 2275
[6] CHARGE BUILD UP AND BREAKDOWN IN THIN SiO2 GATE DIELECTRICS.
Hillen, M.W.
De Keersmaecker, R.F.
Heyns, M.M.
1983, (EI-19):
[7] Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy
Appl Phys Lett, 13 (1871):
[8] Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy
Kaczer, B
Im, HJ
Pelz, JP
Wallace, RM
APPLIED PHYSICS LETTERS, 1998, 73 (13) : 1871 - 1873
[9] BREAKDOWN OF THE SEMICLASSICAL DESCRIPTION OF HOT-ELECTRON DYNAMICS IN SIO2
EKLUND, EA
MCFEELY, FR
CARTIER, E
PHYSICAL REVIEW LETTERS, 1992, 69 (09) : 1407 - 1410
[10] HOT-ELECTRON DYNAMICS IN SIO2 AND THE DEGRADATION OF THE SI/SIO2-INTERFACE
CARTIER, E
DIMARIA, DJ
MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 207 - 210

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