GaAs single crystal growth from melt in space

被引：0

作者：

Zhou, Bojun ^{[1
]}

Zhong, Xingru ^{[1
]}

Cao, Funian ^{[1
]}

Lin, Lanying ^{[1
]}

Da, Daoan ^{[1
]}

Wu, Kailin ^{[1
]}

Huang, Liangfu ^{[1
]}

Zheng, Songhui ^{[1
]}

Xie, Xie ^{[1
]}

机构：

[1] Acad Sinica, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1988年 / 9卷 / 05期

关键词：

Crystals--Growing;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In order to prepare high homogeneity GaAs crystal, the authors have grown GaAs single crystal from melt in space. In space the floating melt zone was formed in the middle of the ingot; then the single crystals were grown face to face from two ends of the melt when the temperature decreased slowly. The two crystals grown in space are in the shape of torch head of diam 1 cm, and their lengths are 1 cm and 0.7 cm respectively. The electric power can be supplied only for 90 min. The temperature dropped rapidly from the melt and thus resulted in the break of the melting zone. The middle melting zone was drawn to the space-grown single crystal of length 0.7 cm and formed polycrystal covering its surface. After the anodic etching of the crystal cross section cut along the axis of the ingot, using an electrolyte of aqueous potassium hydroxide (KOH), the densely aligned parallel striations caused by thermal convection appear on the surface of the seed crystal, not on the space-grown crystal. The impurity striations are observed near some surface regions of the space-grown crystal.

引用

页码：548 / 552