Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine

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Prec. and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsura, Midori-ku, Yokohama 226-8503, Japan [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 2 B卷 / 1012-1014期
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Annealing - Metallorganic chemical vapor deposition - Photoluminescence - Semiconducting gallium compounds - Semiconductor growth - Strain;
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摘要：
A highly strained GaInNAs/GaAs quantum well (QW) was investigated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using tertiarybutylarsine (TBAs) and dimethylhydrazine. The V/III ratio was found to be an important parameter especially for highly strained QW growth using TBAs based on MOCVD. The optimum V/III ratio window of GaInNAs/GaAs QW growth was very narrow and located at different temperatures and In contents. We propose a postgrowth annealing procedure for improving the quality of GaInNAs/GaAs QW. The photoluminescence intensity was significantly improved after annealing at 640°C.
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