Effect of bismuth on liquid-phase epitaxy (LPE) grown GaAs layer using Ga-As-Bi melt

被引：0
|
作者：
Crystal Growth Centre, Anna University, 600 025, Chennai, India [1 ]
不详 [2 ]
机构：
来源：
J Cryst Growth | / 3卷 / 341-347期
关键词：
Number:; -; Acronym:; BCSIR; Sponsor: Bangladesh Council of Scientific and Industrial Research;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] PROPERTIES OF GAAS-V GROWN BY LIQUID-PHASE EPITAXY
    BALASUBRAMANIAN, S
    KUMAR, V
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (08) : 1117 - 1118
  • [22] INFLUENCE OF OXYGEN ON PROPERTIES OF GAAS GROWN BY LIQUID-PHASE EPITAXY
    OTSUBO, M
    SEGAWA, K
    MIKI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (06) : 797 - 803
  • [23] GaAs pyramidal microtips grown by selective liquid-phase epitaxy
    Hu, LZ
    Zhang, HZ
    Wang, ZJ
    Sun, J
    Zhao, Y
    Liang, XP
    JOURNAL OF CRYSTAL GROWTH, 2004, 271 (1-2) : 46 - 49
  • [24] SHALLOW ACCEPTOR LUMINESCENCE IN GAAS GROWN BY LIQUID-PHASE EPITAXY
    BRANTLEY, WA
    QUEISSER, HJ
    HWANG, CJ
    DAWSON, LR
    SOLID STATE COMMUNICATIONS, 1972, 10 (12) : 1141 - &
  • [25] Photoluminescence measurements of GaAs grown by liquid phase epitaxy from Ga-Bi solution
    Ciorga, M
    Bryja, L
    Misiewicz, J
    Paszkiewicz, R
    Panek, M
    Paszkiewicz, B
    Tlaczala, M
    ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, 1998, 8 (01): : 9 - 12
  • [26] LIQUID-PHASE EPITAXY OF ALGAINP ON GAAS SUBSTRATE USING ALGAAS BUFFER LAYER
    SHIBANO, E
    FUJIWARA, S
    KOHNO, K
    TAKAHASHI, NS
    KURITA, S
    CRYSTAL RESEARCH AND TECHNOLOGY, 1993, 28 (04) : 469 - 477
  • [27] HIGH-PURITY IN 0.53GA0.47AS LAYER GROWN BY LIQUID-PHASE EPITAXY
    OHTSUKA, K
    OHISHI, T
    ABE, Y
    SUGIMOTO, H
    MATSUI, T
    OGATA, H
    JOURNAL OF CRYSTAL GROWTH, 1988, 89 (04) : 391 - 394
  • [28] Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt
    K. S. Zhuravlev
    T. S. Shamirzaev
    N. A. Yakusheva
    Semiconductors, 1998, 32 : 704 - 710
  • [29] HIGH-PURITY IN0.5GA0.5P GROWN ON GAAS BY LIQUID-PHASE EPITAXY
    WU, MC
    SU, YK
    CHENG, KY
    CHANG, CY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L90 - L91
  • [30] Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt
    Zhuravlev, KS
    Shamirzaev, TS
    Yakusheva, NA
    SEMICONDUCTORS, 1998, 32 (07) : 704 - 710
12345