GAP STATES IN UNDOPED AMORPHOUS SILICON STUDIED BY BELOW-GAP MODULATED PHOTOCURRENT SPECTROSCOPY.

被引：0
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作者：
Abe, K. [1 ]
Okamoto, H. [1 ]
Nitta, Y. [1 ]
Tsutsumi, Y. [1 ]
Hattori, K. [1 ]
Hamakawa, Y. [1 ]
机构：
[1] Osaka Univ, Toyonaka, Jpn, Osaka Univ, Toyonaka, Jpn
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1988年 / 58卷 / 02期
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