Lateral electron transport through single InAs quantum dots grown by molecular beam epitaxy

被引：0
|
作者：
机构：
[1] Jung, M.
[2] 1,Hirakawa, K.
来源：
Jung, M. (mjung@iis.u-tokyo.ac.jp) | 1600年 / Elsevier期
关键词：
Experimental; (EXP);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The transport properties of single InAs quantum dots (QDs) grown by molecular beam epitaxy have been investigated by metallic leads with nanogaps. It was found that the uncapped InAs QDs grown on the GaAs surfaces show metallic conductivities, indicating that even the exposed QDs are not depleted. On the contrary, it was found that no current flows through the exposed wetting layers. For the case of the QDs covered with GaAs capping layers, clear Coulomb gaps and Coulomb staircases have been observed at 4.2 K. © 2003 Elsevier B.V. All rights reserved.
引用
收藏
相关论文
共 50 条
  • [1] Lateral electron transport through single InAs quantum dots grown by molecular beam epitaxy
    Jung, M
    Hirakawa, K
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 423 - 425
  • [2] Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
    Lendyashova, V. V.
    Ilkiv, I. V.
    Borodin, B. R.
    Ubyivovk, E. V.
    Reznik, R. R.
    Talalaev, V. G.
    Cirlin, G. E.
    ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2022, 15 (03): : 75 - 79
  • [3] Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy
    Pulzara-Mora, A.
    Cruz-Hernandez, E.
    Rojas-Ramirez, J. S.
    Mendez-Garcia, V. H.
    Lopez-Lopez, M.
    MICROELECTRONICS JOURNAL, 2008, 39 (11) : 1248 - 1250
  • [4] Lateral electron transport through single self-assembled InAs quantum dots
    Jung, M
    Hirakawa, K
    Kawaguchi, Y
    Komiyama, S
    Ishida, S
    Arakawa, Y
    APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
  • [5] Single electron transport through individual InAs quantum dots
    Schmidt, KH
    Versen, M
    Kunze, U
    Reuter, D
    Wieck, AD
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1087 - 1088
  • [6] Misfitstrain and growth characteristics of InAs/GaAs quantum dots grown by molecular beam epitaxy
    Kim, Hyubg Seok
    Suh, Ju Hyung
    Park, Chan Gyung
    Lee, Sang June
    Noh, Sam Kyu
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 198 - +
  • [7] InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy
    Ustinov, VM
    Egorov, AY
    Odnoblyudov, VA
    Kryzhanovskaya, NV
    Musikhin, YG
    Tsatsul'nikov, AF
    Alferov, ZI
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 388 - 391
  • [8] Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy
    Gong, Q
    Offermans, P
    Nöetzel, R
    Koenraad, PM
    Wolter, JH
    SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 119 - 124
  • [9] Parametric strudy on InAs quantum dots grown by migration enhanced molecular beam epitaxy
    Song, Jindong
    Choi, Wonjun
    Lee, Jungil
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 414 - 415
  • [10] Antimony incorporation in InAs quantum dots grown on GaAs substrate by molecular beam epitaxy
    Rihani, J.
    Sallet, V.
    Christophe, Ht
    Oueslati, M.
    Chtourou, R.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (03): : 550 - 555
12345