ON THE FERMI LEVEL PINNING AT Ge/GaAs(110) INTERFACE.

被引：0
|
作者：
Xu Zhizhong [1 ]
机构：
[1] Fudan Univ, Shanghai, China, Fudan Univ, Shanghai, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1988年 / 9卷 / 01期
关键词：
CRYSTALS - Structure - SEMICONDUCTING GALLIUM ARSENIDE;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
By semi-empirical TB method and saturated slab model, the electronic states on the GaAs(110) surface adsorbed by Ge atoms in different coverages have been calculated. Combining with previous theoretical and experimental studies, an idea on the problem of Fermi level pinning on the Ge/GaAs(110) interface is suggested.
引用
收藏
页码：82 / 85
相关论文
共 50 条
  • [41] EFFECT OF TEMPERATURE ON THE GE/GAAS(110) INTERFACE FORMATION
    CHEN, P
    BOLMONT, D
    SEBENNE, CA
    SURFACE SCIENCE, 1983, 132 (1-3) : 505 - 512
  • [42] DOPANT INCORPORATION, FERMI-LEVEL MOVEMENT, AND BAND OFFSET AT THE GE/GAAS(001) INTERFACE
    CHAMBERS, SA
    IRWIN, TJ
    PHYSICAL REVIEW B, 1988, 38 (11): : 7858 - 7861
  • [43] GEOMETRY OF THE ABRUPT (110) GE-GAAS INTERFACE
    SWARTS, CA
    GODDARD, WA
    MCGILL, TC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 551 - 555
  • [44] Pinning of the Fermi Level on the Oxidized (110) Surfaces of AIII–Sb Semiconductors
    Alekseev P.A.
    Smirnov A.N.
    Sharov V.A.
    Borodin B.R.
    Kunitsyna E.V.
    Bulletin of the Russian Academy of Sciences: Physics, 2023, 87 (06) : 728 - 730
  • [45] FERMI-LEVEL PINNING AT NICKEL DISILICIDE SILICON INTERFACE
    KIKUCHI, A
    PHYSICAL REVIEW B, 1989, 39 (18) : 13323 - 13326
  • [46] Effect of an atomically matched interface structure on Fermi-level pinning at metal/p-Ge interfaces
    Kasahara, K.
    Yoshioka, H.
    Tojo, Y.
    Nishimura, T.
    Yamada, S.
    Miyao, M.
    Hamaya, K.
    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 223 - 229
  • [47] Origin of weak Fermi level pinning at the graphene/silicon interface
    Courtin, J.
    Tricot, S.
    Delhaye, G.
    Turban, P.
    Lepine, B.
    Le Breton, J-C
    Schieffer, P.
    PHYSICAL REVIEW B, 2020, 102 (24)
  • [48] FERMI-LEVEL PINNING ON IDEALLY TERMINATED INP(110) SURFACES
    YAMADA, M
    WAHI, AK
    KENDELEWICZ, T
    SPICER, WE
    PHYSICAL REVIEW B, 1992, 45 (07): : 3600 - 3605
  • [49] Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces
    Yamamoto, Keisuke
    Wang, Dong
    Nakashima, Hiroshi
    2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), 2014, : 91 - 92
  • [50] Fermi level pinning at GaAs/aqueous and non aqueous electrolyte junctions
    Yao, NA
    Cachet, H
    JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1998, 95 (05) : 1134 - 1149
12345