Cry freedom

被引：0

作者：

Butler, D.

机构：

来源：

European Semiconductor Design Production Assembly | 2001年 / 23卷 / 03期

关键词：

Physical vapor deposition - Process control - Silicon wafers - Sputter deposition - Temperature control - Titanium nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of physical vapor deposition (PVD) on integrated circuits (IC) interconnect manufacturing was investigated in the absence of wafer clamping. Wafer temperature control was discussed in this context and a demonstration of wafer to wafer temperature repeatability was given. Aluminium reflow processes were also analyzed for clampless control of wafer temperature. Investigations revealed the clampless system to be suitable for controlling the heat gain and loss mechanisms of wafer temperature. The other advantages of using this system were also addressed.

引用

页码：92 / 95