Magneto-Coulomb oscillations in ferromagnetic single electron transistors

被引：0

作者：

Ootuka, Youiti ^{[1
]}

Ono, Keiji ^{[1
]}

Matsuda, Ryoji ^{[1
]}

Shimada, Hiroshi ^{[1
]}

机构：

[1] Cryogenic Center, University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo 113-0032, Japan

来源：

Microelectronic Engineering | 1999年 / 47卷 / 01期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：409 / 411

共 50 条

[41] RC-coupled ferromagnetic single-electron transistors [J].

Shirakashi, J ;

Takemura, Y .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :6873-6875

[42] Enhancement of tunnel magnetoresistance in ferromagnetic single-electron transistors [J].

Matsuda, R ;

Kanda, A ;

Ootuka, Y .

PHYSICA B-CONDENSED MATTER, 2003, 329 :1304-1305

[43] Magnetic polarons in ferromagnetic semiconductor single-electron transistors [J].

Lebedeva, N. ;

Varpula, A. ;

Novikov, S. ;

Kuivalainen, P. .

PHYSICAL REVIEW B, 2010, 81 (23)

[44] RC-coupled ferromagnetic single-electron transistors [J].

Shirakashia, J.-I. (shirakashi@akita-pu.ac.jp), 1600, American Institute of Physics Inc. (93)

[45] Single- and double-island ferromagnetic single-electron transistors [J].

Barnas, J ;

Weymann, I ;

Wisniewska, J ;

Kowalik, M ;

Kunert, HW .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 126 (2-3) :275-278

[46] Effect of island length on the Coulomb modulation in single-electron transistors [J].

Phys Rev B, 8 (4591)

[47] Effect of island length on the Coulomb modulation in single-electron transistors [J].

Lu, JG ;

Hergenrother, JM ;

Tinkham, M .

PHYSICAL REVIEW B, 1998, 57 (08) :4591-4598

[48] Peak position control of Coulomb blockade oscillations in silicon single-electron transistors with floating gate operating at room temperature [J].

Tanahashi, Yuma ;

Suzuki, Ryota ;

Saraya, Takuya ;

Hiramoto, Toshiro .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)

[49] Coulomb blockade by electron-hole pairs in coupled single-electron transistors [J].

Shin, M ;

Lee, S ;

Park, KW ;

Kim, GH .

PHYSICAL REVIEW B, 2000, 62 (15) :9951-9954

[50] Single electron transistors with ultra-thin Au nanowires as a single Coulomb island [J].

Yoshihira, M. ;

Moriyama, S. ;

Guerin, H. ;

Ochi, Y. ;

Kura, H. ;

Ogawa, T. ;

Sato, T. ;

Maki, H. .

APPLIED PHYSICS LETTERS, 2013, 102 (20)

← 1 2 3 4 5 →