Valence band structures of GaAs/AlAs lateral superlattices

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作者：

National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China ^{[1
]}

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来源：

J Phys Condens Matter | / 13卷 / 2809-2820期

关键词：

Band structure - Computational methods - Semiconducting aluminum compounds - Semiconducting gallium arsenide;

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摘要：

In the framework of effective-mass envelope function theory, the valence energy subbands and optical transitions in lateral superlattices (LSLs) have been calculated by the plane-wave expansion method. The effects of finite offset and valence band mixing are taken into account. The modulations of several types of lateral potential are also evaluated; they indicate that the out-of-phase modulation on either side of the wells is the strongest while the in-phase modulation is the weakest. The lateral modulation periods have a weak effect on the lowest hole energy levels. When one is making LSLs, the fabrication can be tailored to make the lateral modulation period fairly large, which is favourable for technological applications. Our calculations also show that the effect of the difference between the effective masses of holes in different materials on the valence subband structures is significant. Our theoretical results are in agreement with the available experimental data and have great significance as regards investigating and making low-dimensional semiconductor devices.

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