An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's

被引：0

作者：

Agostinelli Jr., V.M. ^{[1
]}

Bordelon, T.J. ^{[1
]}

Wang, X.L. ^{[1
]}

Yeap, C.F. ^{[1
]}

Maziar, Christine M. ^{[1
]}

Tasch, Al F. ^{[1
]}

机构：

[1] Dept of Electr & Comput Eng,, Univ of Texas, Austin, TX, USA

来源：

Electron device letters | 1992年 / 13卷 / 11期

关键词：

Computer simulation - Ionization - Monte Carlo methods - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A multicurrent contour, average-energy-based, substrate current model for silicon submicrometer NMOSFETs is presented as a significant improvement to the local-field model that is commonly used in modern drift-diffusion device simulators. The model is implemented as a post-processor by applying a one-dimensional energy conservation equation to many current contours in order to generate a two-dimensional representation of average energy and impact ionization rate which is integrated to calculate the substrate current. Comparisons of simulations and experimental I-V curves for both simple and LDD MOSFETs are presented. Outstanding agreement has been obtained over a wide range of bias conditions and channel lengths.

引用

页码：554 / 556