GaAs FET APPLICATIONS EXPAND.

In recent years, the technical progress of the GaAs MES FET (Gallium Arsenide Metal Semiconductor Field Effect Transistor) has been proved remarkable. A high-output power MES FET is capable of 2. 2w output power and 4. 2 db gain at 8 GHz, while a low-noise MES FET can achieve a 2. 2 db noise figure and a 11. 2 db gain at 8 GHz. This article describes GaAs FET applications in which the microwave characteristics are better than those for the silicon bipolar transistor. Design methods for high output amplifiers, low-noise amplifiers and oscillators using the GaAs MES FET are discussed together with their circuits and performance characteristics.