Uniaxial stress effects on a Si/Si1-xGex double barrier resonant tunneling structure by magnetotunnelling spectroscopy

被引：0

作者：

Gennser, Ulf ^{[1
]}

Zaslavsky, A. ^{[1
]}

Grutzmacher, D.A. ^{[1
]}

Gassot, P. ^{[1
]}

Portal, J.C. ^{[1
]}

机构：

[1] Cent Natl de la Recherche, Scientifique-LCMI, Grenoble, France

来源：

Applied Surface Science | 1996年 / 102卷

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摘要：

引用

页码：242 / 246

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