Uniaxial stress effects on a Si/Si1-xGex double barrier resonant tunneling structure by magnetotunnelling spectroscopy

被引：0
作者：
Gennser, Ulf [1 ]
Zaslavsky, A. [1 ]
Grutzmacher, D.A. [1 ]
Gassot, P. [1 ]
Portal, J.C. [1 ]
机构：
[1] Cent Natl de la Recherche, Scientifique-LCMI, Grenoble, France
来源：
Applied Surface Science | 1996年 / 102卷
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页码：242 / 246
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