Ion-induced stress relaxation and formation of defects in an epitaxial GexSi1-x/Si(100) structure

被引：0

作者：

Abramchuk, S.S. ^{[1
]}

Monakhov, E.V. ^{[1
]}

Pokhil, G.P. ^{[1
]}

机构：

[1] Moscow State Univ, Moscow, Russia

来源：

Physics, chemistry and mechanics of surfaces | 1995年 / 11卷 / 10期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1103 / 1109

共 50 条

[31] EPITAXIAL-GROWTH OF GEXSI1-X ON SI - A DIRECT MONTE-CARLO SIMULATION [J].

KOBAYASHI, A ;

DASSARMA, S .

PHYSICAL REVIEW B, 1988, 37 (02) :1039-1042

[32] Optimization of the plastic relaxation of misfit stresses in GexSi1-x/Si(001) (x ≤ 0.61) heterostructures [J].

Bolkhovityanov, YB ;

Deryabin, AS ;

Gutakovskii, AK ;

Revenko, MA ;

Sokolov, LV .

TECHNICAL PHYSICS LETTERS, 2004, 30 (01) :68-70

[33] Investigation of GexSi1-x/Si Nanoheterostructures Grown by Ion-Beam Deposition [J].

Alfimova, D. L. ;

Lunin, L. S. ;

Lunina, M. L. ;

Sysoev, I. A. ;

Pashchenko, A. S. ;

Danilina, E. M. .

JOURNAL OF SURFACE INVESTIGATION, 2019, 13 (03) :493-498

[34] GENERATION AND HEALING OF LOW-ENERGY ION-INDUCED DEFECTS ON SI(100)-2X1 [J].

BEDROSSIAN, P .

SURFACE SCIENCE, 1994, 301 (1-3) :223-232

[35] Growth of ZnSe epilayer on Si using Ge/GexSi1-x buffer structure [J].

Yang, TH ;

Yang, CS ;

Luo, GL ;

Chou, WC ;

Yang, TY ;

Chang, EY ;

Chang, CY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B) :L811-L813

[36] Characterization of Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si [J].

Lombardo, S ;

Raineri, V ;

Portoghese, R ;

Campisano, SU ;

Pinto, A ;

LaRosa, G ;

Ward, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4) :169-172

[37] Growth of ZnSe epilayer on Si using Ge/GexSi1-x buffer structure [J].

Yang, Tsung-Hsi ;

Yang, Chu Shou ;

Luo, Guangli ;

Chou, Wu Ching ;

Yang, Tsung-Yeh ;

Chang, Edward Yi ;

Chang, Chun-Yen .

Japanese Journal of Applied Physics, Part 2: Letters, 2004, 43 (6 B)

[38] A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial GeXSi1-X on Si [J].

Hirsch, PB .

MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157) :121-126

[39] GexSi1-x/Si（100）应变超晶格高分辨电镜研究 [J].

余是东 ;

李齐 ;

王路春 ;

魏明 ;

冯端 ;

俞鸣人 ;

周国良 ;

褚一鸣 .

自然科学进展, 1991, (06) :502-506

[40] RAPID VARIATION IN EPILAYER THREADING DISLOCATION DENSITY NEAR X = 0.4 IN GEXSI1-X ON (100) SI [J].

KVAM, EP .

PHILOSOPHICAL MAGAZINE LETTERS, 1990, 62 (03) :167-173

← 1 2 3 4 5 →