Ion-induced stress relaxation and formation of defects in an epitaxial GexSi1-x/Si(100) structure

被引：0

作者：

Abramchuk, S.S. ^{[1
]}

Monakhov, E.V. ^{[1
]}

Pokhil, G.P. ^{[1
]}

机构：

[1] Moscow State Univ, Moscow, Russia

来源：

Physics, chemistry and mechanics of surfaces | 1995年 / 11卷 / 10期

关键词：

D O I：

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中图分类号：

学科分类号：

摘要：

引用

页码：1103 / 1109

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