Ion-induced stress relaxation and formation of defects in an epitaxial GexSi1-x/Si(100) structure

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作者：
Abramchuk, S.S. [1 ]
Monakhov, E.V. [1 ]
Pokhil, G.P. [1 ]
机构：
[1] Moscow State Univ, Moscow, Russia
来源：
Physics, chemistry and mechanics of surfaces | 1995年 / 11卷 / 10期
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页码：1103 / 1109
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