Surface transient in Si for SIMS with oblique low-energy O2+ beams

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作者：

Delft Inst. Microlectron. S., Department of Applied Physics, Delft University of Technology, PO Box 5046, 2600 GA Delft, Netherlands ^{[1
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来源：

Surf Interface Anal | / 3卷 / 125-131期

关键词：

Oxides - Secondary ion mass spectrometry - Semiconducting silicon compounds - Silicon wafers;

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摘要：

The secondary ion mass spectrometry (SIMS) surface transients in Si were measured for low-energy and grazingly incident O2 beams. Si wafers were used for purposes of obtaining accurate measurements of the transition widths. Ge deltas were used as depth markers. The thickness of the native oxide of Si was determined as a function of storage time in air. Overall, the results demonstrate the usefulness of grazing sub-keV O2+ beams for ultra-shallow SIMS analysis.

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