Size-dependent luminescence of GaAs quantum wires on vicinal GaAs(110) surfaces with giant steps formed by MBE

被引：0
作者：
Osaka Univ, Osaka, Japan [1 ]
机构：
来源：
Physica B: Condensed Matter | 1996年 / 227卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：291 / 294
相关论文
共 50 条
[41]   Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices [J].
R. G. Mani ;
A. Kriisa ;
W. Wegscheider .
Scientific Reports, 3
[42]   Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits [J].
Tommila, J. ;
Schramm, A. ;
Hakkarainen, T. V. ;
Dumitrescu, M. ;
Guina, M. .
NANOTECHNOLOGY, 2013, 24 (23)
[43]   Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer [J].
Sabaeian, Mohammad ;
Khaledi-Nasab, Ali .
APPLIED OPTICS, 2012, 51 (18) :4176-4185
[44]   Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion [J].
Ha, Neul ;
Mano, Takaaki ;
Chou, Ying-Lin ;
Wu, Yu-Nien ;
Cheng, Shun-Jen ;
Bocquel, Juanita ;
Koenraad, Paul M. ;
Ohtake, Akihiro ;
Sakuma, Yoshiki ;
Sakoda, Kazuaki ;
Kuroda, Takashi .
PHYSICAL REVIEW B, 2015, 92 (07)
[45]   Size-dependent binding energies and fine-structure splitting of excitonic complexes in single InAs/GaAs quantum dots [J].
Rodt, S. ;
Seguin, R. ;
Schliwa, A. ;
Guffarth, F. ;
Poetschke, K. ;
Pohl, U. W. ;
Bimberg, D. .
JOURNAL OF LUMINESCENCE, 2007, 122 (735-739) :735-739
[46]   MULTIATOMIC STEP FORMATION MECHANISM OF METALORGANIC VAPOR-PHASE EPITAXIAL GROWN GAAS VICINAL SURFACES AND ITS APPLICATION TO QUANTUM-WELL WIRES [J].
FUKUI, T ;
ISHIZAKI, J ;
HARA, S ;
MOTOHISA, J ;
HASEGAWA, H .
JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :183-187
[47]   STRUCTURAL-ANALYSIS OF ALGAAS QUANTUM WIRES ON VICINAL (110)GAAS BY TRANSMISSION ELECTRON-MICROSCOPY AND ENERGY-DISPERSIVE X-RAY SPECTROSCOPY [J].
TAKEUCHI, M ;
SHIBA, K ;
HUANG, HK ;
SATO, K ;
INOUE, K ;
MAEHASHI, K ;
NAKASHIMA, H .
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :441-445
[48]   Quantum well wire fabrication method using self-organized multiatomic steps on vicinal (001) GaAs surfaces by metalorganic vapor phase epitaxy [J].
Hokkaido Univ, Sapporo, Japan .
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 8 B (4401-4404)
[49]   MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (111)B GaAs surface [J].
Akiyama, Y. ;
Sakaki, H. .
JOURNAL OF CRYSTAL GROWTH, 2007, 301 :697-700
[50]   PHOTOLUMINESCENCE LINE-SHAPE DUE TO ARRAYED STEPS AT THE INTERFACES OF GAAS/ALGAAS SINGLE QUANTUM WELLS GROWN ON VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY [J].
KANAMOTO, K ;
FUJIWARA, K ;
TOKUDA, Y ;
TSUKADA, N ;
ISHII, M ;
NAKAYAMA, T .
APPLIED SURFACE SCIENCE, 1989, 41-2 :526-529
12345