Size-dependent luminescence of GaAs quantum wires on vicinal GaAs(110) surfaces with giant steps formed by MBE

被引：0
作者：
Osaka Univ, Osaka, Japan [1 ]
机构：
来源：
Physica B: Condensed Matter | 1996年 / 227卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：291 / 294
相关论文
共 50 条
[21]   STEP STRUCTURES DURING MBE GROWTH OF GAAS AND ALGAAS FILMS ON VICINAL GAAS(110) SURFACES INCLINED TOWARD (111)B [J].
HASEGAWA, S ;
KIMURA, K ;
SATO, M ;
MAEHASHI, K ;
NAKASHIMA, H .
SURFACE SCIENCE, 1992, 267 (1-3) :5-7
[22]   Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3 degrees toward (111)A by molecular beam epitaxy [J].
Nakashima, H ;
Takeuchi, M ;
Sato, K ;
Shiba, K ;
Huang, HK ;
Maehashi, K ;
Inoue, K ;
Christen, J ;
Grundmann, M ;
Bimberg, D .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3) :295-298
[23]   Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates [J].
Ono, S ;
Takeuchi, M ;
Takahashi, T .
APPLIED PHYSICS LETTERS, 2001, 78 (08) :1086-1088
[24]   OPTICAL-PROPERTIES OF GAAS-ALGAAS QUANTUM-DIMENSIONAL HETEROSTRUCTURES GROWN BY THE MBE TECHNIQUE ON GAAS(100) VICINAL SURFACES [J].
GUBANOV, VB ;
GURYANOV, GM ;
LEDENTSOV, NN ;
PETROV, VN ;
SAMSONENKO, YB ;
TSYRLIN, GE .
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1993, 19 (21) :73-77
[25]   Formation of InGaAs strained quantum wires on GaAs vicinal (110) substrates grown by molecular beam epitaxy [J].
Shim, BR ;
Torii, S ;
Ota, T ;
Kobayashi, K ;
Maehashi, K ;
Hasegawa, S ;
Inoue, K ;
Nakashima, H .
SOLID-STATE ELECTRONICS, 1998, 42 (7-8) :1609-1612
[26]   Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates [J].
Shim, BR ;
Torii, S ;
Ota, T ;
Kobayashi, K ;
Maehashi, K ;
Nakashima, H ;
Lee, SY .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 :S599-S603
[27]   Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(001) surfaces misoriented to the [010] direction [J].
Evtikhiev, VP ;
Tokranov, VE ;
Kryganovskii, AK ;
Boiko, AM ;
Suris, RA ;
Titkov, AN .
JOURNAL OF CRYSTAL GROWTH, 1999, 201 :1154-1157
[28]   Self formation and photoluminescence of II-VI quantum wires on GaAs (110) surfaces [J].
Zhang, B.P. ;
Wang, W.X. ;
Isoya, G. ;
Yasuda, T. ;
Segawa, Y. ;
Yaguchi, H. ;
Onabe, K. ;
Edamatsu, K. ;
Itoh, T. .
Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics, 1997, 18 (2-4) :133-136
[29]   FORMATION OF QUANTUM-WELL WIRE-LIKE STRUCTURES BY MBE GROWTH OF ALGAAS/GAAS SUPERLATTICES ON GAAS (110) SURFACES [J].
HASEGAWA, S ;
SATO, M ;
MAEHASHI, K ;
ASAHI, H ;
NAKASHIMA, H .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :371-375
[30]   SURFACE-DIFFUSION DURING MBE GROWTH OF GAAS-ALGAAS SINGLE QUANTUM WELLS ON VICINAL SURFACES [J].
KANAMOTO, K ;
FUJIWARA, K ;
TOKUDA, Y ;
TSUKADA, N ;
ISHII, M ;
NAKAYAMA, T .
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :273-276
12345