WELL WIDTH DEPENDENCE OF OPTICAL GAIN IN GaAs/ AlGaAs-MULTI-QUANTUM-WELL HETEROSTRUCTURES.

被引：0

作者：

Zielinski, E. ^{[1
]}

Schweizer, H. ^{[1
]}

Stuber, R. ^{[1
]}

Weimann, G. ^{[1
]}

Haspeklo, H. ^{[1
]}

机构：

[1] Univ Stuttgart, Stuttgart, West Ger, Univ Stuttgart, Stuttgart, West Ger

来源：

Physica Scripta | 1987年 / 35卷 / 02期

关键词：

LASERS; SEMICONDUCTOR - Spectrum Analysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this work experimental studies of unsaturated optical net gain coefficients by means of optical gain spectroscopy in GaAs-MQWHs and bulk GaAs are presented. We observe a significant improvement of the characteristic temperature T//0 in 2D-structures (T//0 approximately equals 180 K in 3D-GaAs and T//0 equals 305 K in 2D-GaAs with L//z equals 8. 3 nm). Furthermore T//0 depends on the well width L//z. This behavior is in agreement with calculations assuming the radiative recombination rate as the predominant contribution to the carrier rate equation. In the L//z range from 2. 1 nm to 8. 3 nm, the optical gain in GaAs-MQWHs exhibits a strong anisotropy: net gain is positive only for the TE polarization, in fair agreement with a microscopic model of optical transitions in quantum wells.

引用

页码：216 / 219