PHOTOADMITTANCE IN AMORPHOUS-SILICON SCHOTTKY DIODES.

被引：0

作者：

Drazin, J.P.V. ^{[1
]}

Anderson, J.C. ^{[1
]}

机构：

[1] Imperial Coll of Science &, Technology, London, Engl, Imperial Coll of Science & Technology, London, Engl

来源：

Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1986年 / 54卷 / 01期

关键词：

PLATINUM AND ALLOYS - Applications - SEMICONDUCTING SILICON - Amorphous - SEMICONDUCTOR DIODES - Physical Properties;

D O I：

暂无

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学科分类号：

摘要：

The steady-state photoadmittance Y//p//h( equals G//p//h plus i omega C//p//h) of the depletion region in an amorphous-silicon chottky diode has been measured for different frequencies, temperatures, illumination and bias levels. A model for the temperature dependence of the space-charge photoadmittance in the depletion region is given; the loss contribution due to the transport of photo-generated holes across the depletion region is also considered. Experimental results for a Pt - a-Si:H diode are given and it is suggested that there is a one-to-one correspondence between the detail of G//p//h as a function of temperature and the distribution of the gap-state density N(E) with energy. It is concluded that there is a peak in N(E) at 0. 3-0. 4ev above E//v having an integrated density of 4 multiplied by 10**1**5 cm** minus **3.

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页码：19 / 36