EFFECT OF GROWTH TEMPERATURE ON InGaAsP/GaAsP EPITAXIAL GROWTH.

被引：0

作者：

Fujii, Sadao ^{[1
]}

Tobita, Manabu ^{[1
]}

Furuta, Shigeru ^{[1
]}

Sakai, Shiro ^{[1
]}

Umeno, Masayoshi ^{[1
]}

机构：

[1] Kanegafuchi Chemical Industry Co, Kobe, Jpn, Kanegafuchi Chemical Industry Co, Kobe, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1988年 / 27卷 / 03期

关键词：

D O I：

暂无

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学科分类号：

摘要：

引用

页码：379 / 383

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