QUASI-TWO-DIMENSIONAL MODELING OF GaAs MESFET'S.

被引：0
作者：
Sandborn, Peter A. [1 ]
East, Jack R. [1 ]
Haddad, George I. [1 ]
机构：
[1] Univ of Michigan, Ann Arbor, MI, USA, Univ of Michigan, Ann Arbor, MI, USA
来源：
| 1600年 / ED-34期
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摘要：
SEMICONDUCTOR DEVICES, FIELD EFFECT
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