QUASI-TWO-DIMENSIONAL MODELING OF GaAs MESFET'S.

被引：0

作者：

Sandborn, Peter A. ^{[1
]}

East, Jack R. ^{[1
]}

Haddad, George I. ^{[1
]}

机构：

[1] Univ of Michigan, Ann Arbor, MI, USA, Univ of Michigan, Ann Arbor, MI, USA

来源：

| 1600年 / ED-34期

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摘要：

SEMICONDUCTOR DEVICES, FIELD EFFECT

引用

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