THERMAL BEHAVIOR OF B, P AND AS ATOMS IN SUPERSATURATED SI PRODUCED BY ION IMPLANTATION AND PULSED-LASER ANNEALING.

被引:0
|
作者
ITOH, KAZUO
SASAKI, YOSHISATO
MITSUISHI, TOMOKUNI
MIYAO, MASANOBU
TAMURA, MASAO
机构
来源
| 1982年 / V 21卷 / N 5期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
13
引用
收藏
页码:245 / 247
相关论文
共 23 条
  • [1] THERMAL-BEHAVIOR OF B-ATOMS, P-ATOMS AND AS-ATOMS IN SUPERSATURATED SI PRODUCED BY ION-IMPLANTATION AND PULSED-LASER ANNEALING
    ITOH, K
    SASAKI, Y
    MITSUISHI, T
    MIYAO, M
    TAMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05): : L245 - L247
  • [2] Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
    Olea, J.
    Gonzalez-Diaz, G.
    Pastor, D.
    Garcia-Hemme, E.
    Caudevilla, D.
    Algaidy, S.
    Perez-Zenteno, F.
    Duarte-Cano, S.
    Garcia-Hernansanz, R.
    del Prado, A.
    San Andres, E.
    Martil, I
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (02)
  • [3] DYNAMIC BEHAVIOR OF 30-PS PULSED-LASER ANNEALING IN ION-IMPLANTED SI
    MURAKAMI, K
    GAMO, K
    KAWABE, M
    NAMBA, S
    AOYAGI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2311 - 2312
  • [4] Ferromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser melting
    Scarpulla, MA
    Dubon, OD
    Yu, KM
    Monteiro, O
    Pillai, MR
    Aziz, MJ
    Ridgway, MC
    APPLIED PHYSICS LETTERS, 2003, 82 (08) : 1251 - 1253
  • [5] SUPERSATURATED SI-AS ALLOY FORMATION BY ION-IMPLANTATION AND PULSED ELECTRON-BEAM ANNEALING
    TUROS, A
    MEYER, O
    GEERK, J
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 99 - 102
  • [6] INFLUENCE OF SPIN-DENSITY IN ION-IMPLANTED SI ON PULSED-LASER ANNEALING EFFECT
    MURAKAMI, K
    IKAWA, E
    GAMO, K
    NAMBA, S
    AKASAKA, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C363 - C363
  • [7] Structural and optical properties of Si hyperdoped with Te by ion implantation and pulsed laser annealing
    Komarov, Fadei F.
    Nechaev, Nikita S.
    Ivlev, Gennadii D.
    Vlasukova, Liudmila A.
    Parkhomenko, Irina N.
    Wendler, Elke
    Romanov, Ivan A.
    Berencen, Yonder
    Pilko, Vladimir V.
    Zhigulin, Dmitrii, V
    Komarov, Alexander F.
    VACUUM, 2020, 178
  • [8] Defect passivation in poly-Si TFTs by ion implantation and pulsed laser annealing
    Good, Daniel
    Wickboldt, Paul
    Liu, Tsu-Jae King
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) : 840 - 842
  • [9] FORMATION OF P(+)N JUNCTIONS BY SI(+)+B(+) IMPLANTATION AND LASER ANNEALING
    JUANG, MH
    CHENG, HC
    APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2092 - 2094
  • [10] Optical absorption measurements of silica containing Si nanocrystals produced by ion implantation and thermal annealing
    Elliman, RG
    Lederer, MJ
    Luther-Davies, B
    APPLIED PHYSICS LETTERS, 2002, 80 (08) : 1325 - 1327