1.3μm and 1.55μm Si and Si1-xGex wavelength signal divider

被引:0
|
作者
机构
来源
Lizi Jiaohuan Yu Xifu | / 5卷 / 297-301期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] STRAIN ADJUSTMENT IN SI1-XGEX/SI SUPERLATTICES
    HERZOG, HJ
    JORKE, H
    KASPER, E
    MANTL, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C543 - C543
  • [32] Annealing Behavior of Si1-xGex/Si Heterostructures
    于卓
    李代宗
    成步文
    李成
    雷震霖
    黄昌俊
    张春辉
    余金中
    王启明
    梁骏吾
    半导体学报, 2000, (10) : 962 - 965
  • [33] Valley splitting in Si/Si1-xGex heterostructures
    Balasubramanian, S
    Venkataraman, V
    SOLID STATE COMMUNICATIONS, 1996, 100 (07) : 525 - 528
  • [34] Electrical assessment of Si1-xGex/Si heterostructures
    Lysenko, V.S.
    Tyagulski, I.P.
    Gomeniuk, Y.V.
    Osiyuk, I.N.
    Patel, C.J.
    Nur, O.
    Willander, M.
    Journal De Physique. IV : JP, 1998, 8 (03): : 3 - 87
  • [35] Meso-piezoresistance in Si1-xGex/Si
    Xu, L. P.
    Wen, T. D.
    Yang, X. F.
    Hochheimer, H. D.
    ISTM/2007: 7TH INTERNATIONAL SYMPOSIUM ON TEST AND MEASUREMENT, VOLS 1-7, CONFERENCE PROCEEDINGS, 2007, : 5025 - 5028
  • [36] The electrical assessment of Si1-xGex/Si heterostructures
    Lysenko, VS
    Tyagulski, IP
    Gomeniuk, YV
    Osiyuk, IN
    Patel, CJ
    Nur, O
    Willander, M
    JOURNAL DE PHYSIQUE IV, 1998, 8 (P3): : 87 - 90
  • [37] Si/Si1-xGex异质结器件
    罗浩平
    蔡金华
    微电子学, 1993, (02) : 27 - 32
  • [38] Si/S1-xGex/Si-based quantum wells infrared photodetector operating at 1.55 μm
    Sfina, N.
    Lazzari, J. -L.
    Said, M.
    SUPERLATTICES AND MICROSTRUCTURES, 2012, 52 (04) : 901 - 912
  • [39] Guided-wave Si1-xGex/Si wavelength demultiplexer based on multimode interference
    Li, BJ
    Li, GZ
    Liu, EK
    INFRARED PHYSICS & TECHNOLOGY, 1998, 39 (02) : 61 - 67
  • [40] NOISE PERFORMANCE OF SI/SI1-XGEX FETS
    ANWAR, AFM
    LIU, KW
    KESAN, VP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (10) : 1841 - 1846