1.3μm and 1.55μm Si and Si1-xGex wavelength signal divider

被引：0
|
作者：
机构：
来源：
Lizi Jiaohuan Yu Xifu | / 5卷 / 297-301期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Study of Si1-xGex/Si/Si1-xGex heterostructures with abrupt interfaces for ultrahigh mobility FETs
    Sugii, N
    Nakagawa, K
    Yamaguchi, S
    Miyao, M
    III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, 535 : 269 - 274
  • [22] Guide wave Si1-xGex/Si wavelength demultiplexer based on multimode interference
    Li, Baojun
    Li, Guozheng
    Liu, Enke
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1998, 19 (07): : 515 - 520
  • [23] ROOM-TEMPERATURE 1.3-MU AND 1.5-MU-M ELECTROLUMINESCENCE FROM SI/SI1-XGEX QUANTUM-WELLS
    MI, Q
    XIAO, X
    STURM, JC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2678 - 2678
  • [24] LONG-WAVELENGTH (10-MU-M) INFRARED DETECTOR USING SI1-XGEX/SI MULTIPLE QUANTUM-WELLS
    KARUNASIRI, RPG
    PARK, JS
    WANG, KL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2708 - 2708
  • [25] Novel Multimode Interference Optical Filters in GeSi/Si for λ=1.3μm and 1.55μm
    LI Baojun
    SemiconductorPhotonicsandTechnology, 1997, (03) : 3 - 8
  • [26] Relaxation of (001)Si/Si1-xGex/Si heterostructures
    Xin, Y
    Brown, PD
    Schaublin, RE
    Humphreys, CJ
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 183 - 186
  • [27] THE COMPOSITION DEPENDENCE OF THE CUTOFF FREQUENCIES OF UNGRADED SI1-XGEX/SI1-YGEY/SI1-XGEX HBTS
    ROSENFELD, D
    ALTEROVITZ, SA
    SOLID-STATE ELECTRONICS, 1995, 38 (03) : 641 - 651
  • [28] INTENSE PHOTOLUMINESCENCE BETWEEN 1.3-MU AND 1.8-MU-M FROM STRAINED SI1-XGEX ALLOYS
    NOEL, JP
    ROWELL, NL
    HOUGHTON, DC
    PEROVIC, DD
    APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1037 - 1039
  • [29] The resonant tunneling in Si1-xGex/Si superlattices
    Xu, Li-Ping
    Wen, Ting-Dun
    Yang, Xiao-Feng
    Zhang, Wen-Dong
    NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2, 2007, 121-123 : 645 - 648
  • [30] CRITICAL THICKNESS FOR THE SI1-XGEX/SI HETEROSTRUCTURE
    FUKUDA, Y
    KOHAMA, Y
    OHMACHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (01): : L20 - L22
12345