INFLUENCE OF THE Mn IMPURITY ON THE MAGNETIC AND ELECTRICAL PROPERTIES OF NARROW-GAP (Pb1 - ySny)1 - xMnxTe SEMICONDUCTORS.

被引：0

作者：

Brodovoi, A.V. ^{[1
]}

Lashkarev, G.V. ^{[1
]}

Radchenko, M.V. ^{[1
]}

Slynko, E.I. ^{[1
]}

Tovstyuk, K.D. ^{[1
]}

机构：

[1] Acad of Sciences of the Ukrainian, SSR, Inst of Problems in Materials, Science, Kiev, USSR, Acad of Sciences of the Ukrainian SSR, Inst of Problems in Materials Science, Kiev, USSR

来源：

Soviet physics. Semiconductors | 1984年 / 18卷 / 09期

关键词：

CRYSTALS - Impurities - MAGNETIC PROPERTIES - MANGANESE AND ALLOYS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

An investigation was made of the negative resistance at 4. 2 K and of the temperature dependences of the magnetic susceptibility, Hall coefficient, and electrical resistivity of title single crystals with the manganese content in the range 0. 04 less than equivalent to x less than equivalent to 0. 1. The results obtained made it possible to study changes in the exchange interactions because of changes in the manganese concentration. When the carrier density was approximately 6. 0 multiplied by 10**2**0cm** minus **3 and the manganese concentration was x approximately 0. 1, a ferromagnetic exchange interaction occurred between the Mn**2** plus ions. It was concluded that an interaction of the Ruderman-Kittel-Kasuya-Yosida type should play an important role. The exchange integral at 4. 2 K was 2 eV.

引用

页码：970 / 972

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