Preparation of plasma chemical vapor deposition silicon nitride films from SiH2F2 and NH3 source gases

被引：0
|
作者：
Watanabe, Nobuaki [1 ]
Yoshida, Mamoru [1 ]
Jiang, Yi-Chao [1 ]
Nomoto, Tutomu [1 ]
Abiko, Ichimatsu [1 ]
机构：
[1] OKI Electric Industry Co., Ltd, Hachioji, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 04期
关键词：
Breakdown Strength - Fluorinated Silicon Nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：619 / 621
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