Preparation of plasma chemical vapor deposition silicon nitride films from SiH2F2 and NH3 source gases

被引：0

作者：

Watanabe, Nobuaki ^{[1
]}

Yoshida, Mamoru ^{[1
]}

Jiang, Yi-Chao ^{[1
]}

Nomoto, Tutomu ^{[1
]}

Abiko, Ichimatsu ^{[1
]}

机构：

[1] OKI Electric Industry Co., Ltd, Hachioji, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 04期

关键词：

Breakdown Strength - Fluorinated Silicon Nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：619 / 621

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