共 50 条
- [41] AN INTERFACIAL PROPERTY OF THE INGAAS SEMI-INSULATING INP STRUCTURE PREPARED BY METAL ORGANIC VAPOR-PHASE EPITAXY PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 90 (02): : K215 - K218
- [42] INGAAS PIN PHOTODIODES ON RECESSED SEMI-INSULATING GAAS SUBSTRATES IEE PROCEEDINGS-J OPTOELECTRONICS, 1988, 135 (01): : 2 - 4
- [43] The effect of nitrogen implantation on structural changes in semi-insulating InP NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 212 : 197 - 200
- [47] Performance of radiation detectors based on semi-insulating GaAs and InP SENSORS AND MICROSYSTEMS, 2000, : 437 - 441
- [48] Semi-insulating InP wafers obtained by Fe-diffusion 2005 International Conference on Indium Phosphide and Related Materials, 2005, : 649 - 652
- [49] Uniformity of Iron-Doped Semi-Insulating InP Wafers JOURNAL OF RARE EARTHS, 2007, 25 : 360 - 362