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ABSORPTION OF LIGHT BY NONEQUILIBRIUM CARRIERS AND RECOMBINATION IN SILICON AT HIGH INJECTION LEVELS.
被引：0
作者：
Ashkinadze, B.M.
Patrin, A.A.
Yaroshetskii, I.D.
机构：
来源：
|
1972年
/
5卷
/
09期
关键词：
LIGHT;
-;
Absorption;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Study was made of the absorption of near infrared radiation by nonequilibrium carriers in silicon which has been bulk- or surface-excited with high-power laser pulses. The investigation was carried out in a wide range of temperatures. Measurements were made of the density of carriers and their lifetimes (the latter as a function of the carrier density from 10**1**6 to8 multiplied by (times) 10**1**9 cm** minus **3). The temperature dependence of the photon absorption cross section of nonequilibrium carriers was determined.
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页码：1471 / 1475
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