ABSORPTION OF LIGHT BY NONEQUILIBRIUM CARRIERS AND RECOMBINATION IN SILICON AT HIGH INJECTION LEVELS.

被引：0
|
作者：
Ashkinadze, B.M.
Patrin, A.A.
Yaroshetskii, I.D.
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来源：
| 1972年 / 5卷 / 09期
关键词：
LIGHT; -; Absorption;
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摘要：
Study was made of the absorption of near infrared radiation by nonequilibrium carriers in silicon which has been bulk- or surface-excited with high-power laser pulses. The investigation was carried out in a wide range of temperatures. Measurements were made of the density of carriers and their lifetimes (the latter as a function of the carrier density from 10**1**6 to8 multiplied by (times) 10**1**9 cm** minus **3). The temperature dependence of the photon absorption cross section of nonequilibrium carriers was determined.
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页码：1471 / 1475
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