Resonant photorefractive AlGaAs/GaAs multiple quantum wells grown by molecular beam epitaxy at low temperature

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 9卷 / 7404期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
    G. E. Cirlin
    I. V. Shtrom
    R. R. Reznik
    Yu. B. Samsonenko
    A. I. Khrebtov
    A. D. Bouravleuv
    I. P. Soshnikov
    Semiconductors, 2016, 50 : 1421 - 1424
  • [22] Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
    Cirlin, G. E.
    Shtrom, I. V.
    Reznik, R. R.
    Samsonenko, Yu. B.
    Khrebtov, A. I.
    Bouravleuv, A. D.
    Soshnikov, I. P.
    SEMICONDUCTORS, 2016, 50 (11) : 1421 - 1424
  • [23] Effects of carbon impurity on GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy
    Zhang, DH
    Li, CY
    Yoon, SF
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 54 - 58
  • [24] ROOM-TEMPERATURE OBSERVATION OF RESONANT TUNNELING THROUGH AN ALGAAS/GAAS QUASIPARABOLIC QUANTUM WELL GROWN BY MOLECULAR-BEAM EPITAXY
    CHOU, SY
    HARRIS, JS
    APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1422 - 1424
  • [25] {111} quantum wells of dilute nitrides grown on GaAs by molecular beam epitaxy
    Arnoult, A
    Gonzalez-Posada, F
    Blanc, S
    Bardinal, V
    Fontaine, C
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (3-4): : 352 - 355
  • [26] Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
    Wu Bing-Peng
    Wu Dong-Hai
    Ni Hai-Qiao
    Huang She-Song
    Zhan Feng
    Xiong Yong-Hua
    Xu Ying-Qiang
    Niu Zhi-Chuan
    CHINESE PHYSICS LETTERS, 2007, 24 (12) : 3543 - 3546
  • [27] Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy
    Nakashima, H
    Takeuchi, T
    Inoue, K
    Fukunaga, T
    Bimberg, D
    Christen, J
    SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (04) : 511 - 515
  • [28] Applications of GaAs grown at a low temperature by molecular beam epitaxy
    Mishra, Umesh K.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1993, B22 (01): : 72 - 77
  • [29] Characterization of low temperature GaAs grown by molecular beam epitaxy
    Lee, WC
    Hsu, TM
    Chyi, JI
    Lee, GS
    Li, WH
    Lee, KC
    APPLIED SURFACE SCIENCE, 1996, 92 : 66 - 69
  • [30] Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers
    Zhang, MH
    Huang, Q
    Zhang, YF
    Zhou, JM
    Li, Q
    Xu, ZY
    APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1366 - 1368
12345