Resonant photorefractive AlGaAs/GaAs multiple quantum wells grown by molecular beam epitaxy at low temperature

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 9卷 / 7404期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Resonant photorefractive AlGaAs/GaAs multiple quantum wells grown by molecular beam epitaxy at low temperature
    Feng, W
    Zhang, ZG
    Yu, Y
    Huang, Q
    Fu, PM
    Zhou, JM
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) : 7404 - 7406
  • [2] GaAs/AlGaAs quantum wells grown by low-temperature molecular beam epitaxy with atomic hydrogen irradiation
    Okada, Yoshitaka
    Ohta, Shigeru
    Fujita, Tomoya
    Kawabe, Mitsuo
    1600, Publ by JJAP, Minato-ku, Japan (33):
  • [3] Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature
    Huang, Q
    Guo, LW
    Zhang, MH
    Zhang, YF
    Han, YJ
    Zhou, JM
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 117 - 122
  • [4] Study on photorefractive properties of the low-temperature-grown GaAs/AlGaAs multiple quantum wells devices
    Chinese Acad of Sciences, Beijing, China
    Guangdianzi Jiguang, (316-318):
  • [5] GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy
    Zhang, DH
    Li, CY
    Yoon, SF
    Raman, A
    ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 180 - 184
  • [6] Stoichiometric low temperature (SLT) GaAs and AlGaAs grown by molecular beam epitaxy
    Missous, M
    MICROELECTRONICS JOURNAL, 1996, 27 (4-5) : 393 - 409
  • [7] GAAS/ALGAAS QUANTUM-WELLS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY WITH ATOMIC-HYDROGEN IRRADIATION
    OKADA, Y
    OHTA, S
    FUJITA, T
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 759 - 762
  • [8] INTERFACE DISORDER IN GAAS/ALGAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE-TEMPERATURE
    HAYAKAWA, T
    SUYAMA, T
    TAKAHASHI, K
    KONDO, M
    YAMAMOTO, S
    YANO, S
    HIJIKATA, T
    APPLIED PHYSICS LETTERS, 1985, 47 (09) : 952 - 954
  • [9] Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments
    Contreras-Guerrero, R.
    Guillen-Cervantes, A.
    Rivera-Alvarez, Z.
    Pulzara-Mora, A.
    Gallardo-Hernandez, S.
    Kudriatsev, Y.
    Sanchez-Resendiz, V. M.
    Rojas-Ramirez, J. S.
    Cruz-Hernandez, E.
    Mendez-Garcia, V. H.
    Zamora-Peredo, L.
    Lopez-Lopez, M.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1666 - 1670
  • [10] Extremely flat interfaces in GaAs/AlGaAs quantum wells grown on GaAs(411)A substrates by molecular beam epitaxy
    Shimomura, Satoshi, 1728, Publ by JJAP, Minato-ku, Japan (32):
12345