[100]Si with ultrathin layers of SiO2, Al2O3, and ZrO2: Electron spin resonance study

被引：0
作者：
Stesmans, A. [1 ]
Afanas'ev, V.V. [1 ]
Houssa, M. [1 ]
机构：
[1] Department of Physics, University of Leuven, Leuven,3001, Belgium
来源：
Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001 | 2001年
关键词：
Compendex;
D O I：
967549
中图分类号：
学科分类号：
摘要：
Magnetic moments - Spin dynamics - Temperature - Silica - Aluminum oxide - Chemical vapor deposition - Silicon - Alumina - Zirconia
引用
收藏
页码：64 / 69
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