Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure

被引：0
|
作者：
机构：
[1] Wang, Tsung-Miau
[2] 1,Hwu, Jenn-Gwo
来源：
Wang, T.-M. | 1600年 / American Institute of Physics Inc.卷 / 97期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
    Liu, Xinke
    Zhan, Chunlei
    Chan, Kwok Wai
    Owen, Man Hon Samuel
    Liu, Wei
    Chi, Dong Zhi
    Tan, Leng Seow
    Chen, Kevin Jing
    Yeo, Yee-Chia
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [42] Optimization of Impact Ionization in Metal-Oxide-Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance
    Chen, Yanning
    Song, Yixian
    Wu, Bo
    Liu, Fang
    Deng, Yongfeng
    Kang, Pingrui
    Huang, Xiaoyun
    Wu, Yongyu
    Gao, Dawei
    Xu, Kai
    ELECTRONICS, 2024, 13 (20)
  • [43] Modeling random telegraph signals in the gate current of metal-oxide-semiconductor field effect transistors after oxide breakdown
    Avellán, A
    Schroeder, D
    Krautschneider, W
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) : 703 - 708
  • [44] ON THE RELAXATION OF FIELD-INDUCED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
    MEINERTZHAGEN, A
    HENRY, V
    PETIT, C
    ELHDIY, A
    JOURDAIN, M
    SOLID-STATE ELECTRONICS, 1994, 37 (08) : 1553 - 1556
  • [45] Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides
    Cheng, Jen-Yuan
    Huang, Chiao-Ti
    Hwu, Jenn-Gwo
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)
  • [46] Mechanically induced strain enhancement of metal-oxide-semiconductor field effect transistors
    Haugerud, B.M. (belford@hargray.com), 1600, American Institute of Physics Inc. (94):
  • [47] Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications
    Liu, W. H.
    Pey, K. L.
    Raghavan, N.
    Wu, X.
    Bosman, M.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (02)
  • [48] Mechanically induced strain enhancement of metal-oxide-semiconductor field effect transistors
    Haugerud, BM
    Bosworth, LA
    Belford, RE
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) : 4102 - 4107
  • [49] Variational Thermodynamic and Finite Element Analysis Models of the Metal-Oxide-Semiconductor Capacitor
    Santiago, John Rose
    Patel, Krunal V.
    Sattar, Md A.
    Gunther, Norman G.
    Rahman, Mahmudur
    2014 INTERNATIONAL CONFERENCE ON CIRCUITS, SYSTEMS, COMMUNICATION AND INFORMATION TECHNOLOGY APPLICATIONS (CSCITA), 2014, : 168 - 172
  • [50] Improved Performance of Multilayer TiON/TaON Structure as Gate Dielectric for InGaAs Metal-Oxide-Semiconductor Capacitor
    Wang, Li-Sheng
    Xu, Jing-Ping
    Liu, Lu
    Lu, Han-Han
    PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIALS, ENVIRONMENTAL AND BIOLOGICAL ENGINEERING, 2015, 10 : 324 - 327
12345