Study of loading effect during electron-beam exposure and etching process in photomask fabrication

被引：0
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作者：
Choi, Ji-Hyeon [1 ]
Kim, Byung-Gook [1 ]
Jeon, Chan-Uk [1 ]
Cho, Sung-Yong [1 ]
Choi, Seong-Woon [1 ]
Sohn, Jung-Min [1 ]
机构：
[1] Semicodutor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do, 449-711, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 12 B期
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页码：6981 / 6984
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