EXPERIMENTAL DETECTION OF WANNIER LEVELS IN CHROMIUM-DOPED n-TYPE GaAs.

被引：0
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作者：
Vavilov, V.S. [1 ]
Morozova, V.A. [1 ]
Ostoborodova, V.V. [1 ]
Smirnova, A.D. [1 ]
机构：
[1] Moscow State Univ, Moscow, USSR, Moscow State Univ, Moscow, USSR
来源：
Soviet physics. Semiconductors | 1984年 / 18卷 / 10期
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摘要：
16
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页码：1174 / 1176
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