Carrier concentration dependence of photoacoustic signal intensity of silicon

被引：0

作者：

Kuwahata, Hiroshi ^{[1
]}

Muto, Nobuo ^{[1
]}

Uehara, Fumiya ^{[2
]}

Matsumori, Tokue ^{[1
]}

机构：

[1] Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

[2] Department of Resources and Environmental Science, Faculty of Humanities and Culture, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 5 B期

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D O I：

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摘要：

引用

页码：3168 / 3170

共 50 条

[1] Carrier concentration dependence of photoacoustic signal intensity of silicon
Kuwahata, H
Muto, N
Uehara, F
Matsumori, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (5B): : 3168 - 3170
[2] Carrier concentration dependence of photoacoustic spectra of silicon by a piezoelectric transducer method
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2000, JJAP, Tokyo, Japan (39):
[3] Carrier concentration dependence of photoacoustic spectra of silicon by a piezoelectric transducer method
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (5B): : 3169 - 3171
[4] PHOTOACOUSTIC SPECTROMETRY BY TOTAL INTERNAL-REFLECTION TECHNIQUE - DEPENDENCE OF PHOTOACOUSTIC SIGNAL INTENSITY ON CONCENTRATION AND OPTICAL-PATH
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[10] INTENSITY OF A SIGNAL WITH NONSINUSOIDAL CARRIER
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