KrF lithography for 0.25-μm CMOS/SIMOX pattern fabrication

被引：0
|
作者：
NTT System Electronics Lab, Japan [1 ]
机构：
来源：
NTT R&D | / 4卷 / 379-386期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [1] KrF lithography for 0.25-mu m CMOS/SIMOX pattern fabrication
    Kawai, Y
    Ohtaka, A
    Nakamura, J
    Tanaka, A
    NTT REVIEW, 1997, 9 (04): : 96 - 104
  • [2] New resist technologies for 0.25-μm wiring pattern fabrication with KrF lithography
    Kawai, Yoshio
    Otaka, Akihiro
    Tanaka, Akinobu
    Nakamura, Jiro
    Sakuma, Kazuhito
    Matsuda, Tadahito
    Sakakibara, Yutaka
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (4 A): : 2085 - 2090
  • [3] New resist technologies for 0.25-mu m wiring pattern fabrication with KrF lithography
    Kawai, Y
    Otaka, A
    Tanaka, A
    Nakamura, J
    Sakuma, K
    Matsuda, T
    Sakakibara, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (4A): : 2085 - 2090
  • [4] Low-power and high-speed LSIs using 0.25-μm CMOS/SIMOX
    NTT Electronics Co, Ltd, Atsugi-shi, Japan
    IEICE Trans Electron, 12 (1532-1538):
  • [5] Low-power and high-speed LSIs using 0.25-μm CMOS/SIMOX
    Ino, M
    IEICE TRANSACTIONS ON ELECTRONICS, 1997, E80C (12) : 1532 - 1538
  • [6] 0.25 μm CMOS/SIMOX device technology
    Tsuchiya, Toshiaki
    Ohno, Terukazu
    Kado, Yuichi
    Nakashima, Sadao
    NTT R and D, 1997, 46 (04): : 361 - 370
  • [7] 0.25 μm CMOS/SIMOX device technology
    NTT Rev, 4 (78-87):
  • [8] 0.25 mu m CMOS/SIMOX device technology
    Tsuchiya, T
    Ohno, T
    Kado, Y
    Nakashima, S
    NTT REVIEW, 1997, 9 (04): : 78 - 87
  • [9] KrF excimer lithography eyed for 0.25μm device technology
    Anon
    JEE. Journal of electronic engineering, 1995, 32 (348):
  • [10] Modular SiGeBiCMOS device exploits 0.25-μm CMOS technology
    Bindra, A
    ELECTRONIC DESIGN, 2000, 48 (01) : 25 - 26
12345