Characterization of GaN-based Schottky barrier ultraviolet (UV) detectors in the UV and vacuum ultraviolet (VUV) region using synchrotron radiation

被引：0

作者：

Motogaito, Atsushi ^{[1
]}

Yamaguchi, Motoo ^{[1
]}

Hiramatsu, Kazumasa ^{[1
]}

Kotoh, Masahiro ^{[2
]}

Ohuchi, Youichiro ^{[2
]}

Tadatomo, Kazuyuki ^{[2
]}

Hamamura, Yutaka ^{[3
]}

Fukui, Kazutoshi ^{[4
]}

机构：

[1] Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan

[2] Photonics Research Laboratory, Mitsubishi Cable Industries, Ltd., 4-3 Ikejiri, Itami, Hyogo 664-0027, Japan

[3] Sagamihara Plant, Nikon Co., Ltd., 1-10-1 Asamizodai, Sagamihara, Kanagawa 228-0828, Japan

[4] Department of Vacuum UV Photoscience, Institute for Molecular Science, Myodaiji, Okazaki, Aichi 444-8585, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2001年 / 40卷 / 4 B期

关键词：

Vacuum ultraviolet (VUV) region;

D O I：

10.1143/jjap.40.l368

中图分类号：

学科分类号：

摘要：

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