Characterization of GaN-based Schottky barrier ultraviolet (UV) detectors in the UV and vacuum ultraviolet (VUV) region using synchrotron radiation

被引：0
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作者：
Motogaito, Atsushi [1 ]
Yamaguchi, Motoo [1 ]
Hiramatsu, Kazumasa [1 ]
Kotoh, Masahiro [2 ]
Ohuchi, Youichiro [2 ]
Tadatomo, Kazuyuki [2 ]
Hamamura, Yutaka [3 ]
Fukui, Kazutoshi [4 ]
机构：
[1] Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
[2] Photonics Research Laboratory, Mitsubishi Cable Industries, Ltd., 4-3 Ikejiri, Itami, Hyogo 664-0027, Japan
[3] Sagamihara Plant, Nikon Co., Ltd., 1-10-1 Asamizodai, Sagamihara, Kanagawa 228-0828, Japan
[4] Department of Vacuum UV Photoscience, Institute for Molecular Science, Myodaiji, Okazaki, Aichi 444-8585, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2001年 / 40卷 / 4 B期
关键词：
Vacuum ultraviolet (VUV) region;
D O I：
10.1143/jjap.40.l368
中图分类号：
学科分类号：
摘要：
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