Native point defect equilibria and the phase extent of gallium arsenide

被引：0

作者：

Hurle, D.T.J. ^{[1
]}

机构：

[1] Univ of Bristol, Bristol, United Kingdom

来源：

Materials Science Forum | 1995年 / 196-201卷 / pt 1期

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引用

页码：179 / 188

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[31] BREAKDOWN IN POINT CONTACT BETWEEN METAL AND GALLIUM ARSENIDE
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[32] LIGHT-EMITTING FORMED-POINT-CONTACT GALLIUM ARSENIDE + GALLIUM ARSENIDE-PHOSPHIDE DIODES
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[33] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM-ARSENIDE
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[34] IDENTIFICATION OF A TRIGONAL CATION ANTISITE DEFECT IN GALLIUM-ARSENIDE
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[36] Gallium arsenide based floating point adder/subtractor
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[37] Influence of Temperature on Anodically Grown Native Oxides on Gallium Arsenide
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[38] A DEFECT MODEL FOR UNDOPED AND TELLURIUM DOPED GALLIUM-ARSENIDE
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[39] EFFECT OF THE INTERFACE ON RADIATION DEFECT FORMATION IN GALLIUM-ARSENIDE
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[40] PHASE AND POINT-DEFECT EQUILIBRIA IN THE TITANOMAGNETITE SOLID-SOLUTION
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