Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers

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作者：
Rensselaer Polytechnic Inst, Troy, United States [1 ]
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来源：
IEEE Trans Electron Devices | / 3卷 / 493-496期
关键词：
Electric conductivity of solids - Electric current control - Negative resistance - Semiconducting silicon compounds - Semiconductor diodes - Semiconductor doping - Semiconductor junctions - Silicon carbide;
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摘要：
This paper presents an experimental demonstration of a current-controlled negative resistance (CCNR) in the forward characteristics of 6H-SiC P-i-N rectifiers. These forward characteristics indicate that the poor electrical performance of SiC diodes arises because conductivity modulation is not yet established. The cause of this behavior appears to be high defect densities and low minority carrier lifetime in the lightly doped drift region. N+P junctions exhibit excellent forward characteristics with forward drop of 2.8 V at 100 A/cm2 and 3.9 V at 1000 A/cm2 without entering the CCNR mode when traps have been filled prior to the measurement.
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